semiconductor group 1 pnp silicon darlington transistors bcv 28 bcv 48 maximum ratings type ordering code (tape and reel) marking package 1) pin configuration bcv 28 bcv 48 q62702-c1852 q62702-c1854 ed ee sot-89 1 2 3 4 b c e c 1) for detailed information see chapter package outlines. 2) package mounted on epoxy pcb 40 mm 40 mm 1.5 mm/6 cm 2 cu. parameter symbol values unit collector-emitter voltage v ce0 v peak collector current i cm collector current i c ma junction temperature t j ?c total power dissipation, t s = 124 ?c p tot w storage temperature range t stg collector-base voltage v cb0 thermal resistance junction - ambient 2) r th ja 72 k/w 500 800 1 150 C 65 + 150 emitter-base voltage v eb0 base current i b 100 30 60 40 80 bcv 28 bcv 48 peak base current i bm 200 10 10 junction - soldering point r th js 17 l for general af applications l high collector current l high current gain l complementary types: bcv 29, bcv 49 (npn)
semiconductor group 2 bcv 28 bcv 48 electrical characteristics at t a = 25 ?c, unless otherwise specified. dc current gain 1) i c = 100 m a, v ce = 1 v bcv 28 bcv 48 i c = 10 ma, v ce = 5 v bcv 28 bcv 48 i c = 100 ma, v ce = 5 v bcv 28 bcv 48 i c = 0.5 a, v ce = 5 v bcv 28 bcv 48 v collector-emitter breakdown voltage i c = 10 ma bcv 28 bcv 48 v (br)ce0 30 60 C C C C na na m a m a collector cutoff current v cb = 30 v bcv 28 v cb = 60 v bcv 48 v cb = 30 v, t a = 150 ?c bcv 28 v cb = 60 v, t a = 150 ?c bcv 48 i cb0 C C C C C C C C 100 100 10 10 unit values parameter symbol min. typ. max. dc characteristics collector-base breakdown voltage i c = 100 m a bcv 28 bcv 48 v (br)cb0 40 80 C C C C emitter-base breakdown voltage, i e = 10 m a v (br)eb0 10 C C v collector-emitter saturation voltage 1) i c = 100 ma, i b = 0.1 ma v cesat CC1 C h fe 4000 2000 10000 4000 20000 10000 4000 2000 C C C C C C C C C C C C C C C C base-emitter saturation voltage 1) i c = 100 ma; i b = 0.1 ma v besat C C 1.5 na emitter cutoff current, v eb = 4 v i eb0 C C 100 mhz transition frequency i c = 50 ma, v ce = 5 v, f = 20 mhz f t C 200 C ac characteristics pf output capacitance v cb = 10 v, f = 1 mhz c obo C 4.5 C 1) pulse test: t 300 m s, d = 2 %.
semiconductor group 3 bcv 28 bcv 48 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy permissible pulse load p tot max / p tot dc = f ( t p ) collector cutoff current i cb0 = f ( t a ) v cb = v ce max transition frequency f t = f ( i c ) v ce = 5 v
semiconductor group 4 bcv 28 bcv 48 collector-emitter saturation voltage i c = f ( v cesat ) h fe = 1000 collector-base capacitance c cb0 = f ( v cb0 ) emitter-base capacitance c eb0 = f ( v eb0 ) base-emitter saturation voltage i c = f ( v besat ) h fe = 1000 dc current gain h fe = f ( i c ) v ce = 5 v
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